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| www..com Pb Free Plating Product ISSUED DATE :2006/12/07 REVISED DATE : GJ494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 55A The GJ494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a high side switch in SMPS and general purpose applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg Ratings 30 12 55 39 120 63 0.42 -55 ~ +175 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.4 50 Unit : /W : /W GJ494 Page: 1/4 ISSUED DATE :2006/12/07 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 30 1.0 - Typ. 40 22 3.7 2.7 10 6.3 21 2.8 1210 330 85 Max. 2.5 100 1 25 11 13.5 28 1452 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=20A VGS= 12V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=20A VGS=4.5V, ID=20A ID=20A VDS=15V VGS=10V VDS=15V VGS=10V RG=3 RL=0.75 VGS=0V VDS=15V f=1.0MHz Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Symbol VSD IS Trr Qrr Min. - Typ. 36 47 Max. 1.0 55 - Unit V A ns nC Test Conditions IS=1A, VGS=0V VD= VG=0V, VS=1.0V IS=20A, VGS=0V dI/dt=100A/ s Reverse Recovery Time 2 Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GJ494 Page: 2/4 ISSUED DATE :2006/12/07 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 100 10 1 0.1 0.01 0.001 0.0001 0.00001 Fig 4. On-Resistance v.s. Junction Temperature Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics GJ494 Page: 3/4 ISSUED DATE :2006/12/07 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ494 Page: 4/4 |
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